Effects of CH4/SiH4 flow ratio and microwave power on the growth of β-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 °C
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| Title: | Effects of CH4/SiH4 flow ratio and microwave power on the growth of β-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 °C |
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| Authors: | Lee, Wen-Horng1, Lin, Jing-Cheng1, Lee, Chiapyng1, cl@ch.ntust.edu.tw, Cheng, Huang-Chung2, Yew, Tri-Rung3 |
| Source: | Thin Solid Films; Feb2002, Vol. 405 Issue 1/2, p17, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00406090 |
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| DOI: | 10.1016/S0040-6090(01)01723-0 |
