DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiN x -film for early-protection against oxidation.

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Bibliographic Details
Title: DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiN x -film for early-protection against oxidation.
Authors: Moschetti, Giuseppe1, giuseppe.moschetti@chalmers.se, Lefebvre, Eric1,2, Fagerlind, Martin1,3, Nilsson, Per-Åke1, Desplanque, Ludovic4, Wallart, Xavier4, Grahn, Jan1
Source: Solid-State Electronics; Sep2013, Vol. 87, p85-89, 5p
Database: Applied Science & Technology Source
Description
ISSN:00381101
DOI:10.1016/j.sse.2013.06.008