The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors.

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Bibliographic Details
Title: The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors.
Authors: Liao, W. C.1, Chen, Y. L.1, Chen, C. H.1, Chyi, J. I.1, Hsin, Y. M.1
Source: Applied Physics Letters; 1/20/2014, Vol. 104 Issue 3, p033503-1-033503-5, 5p, 5 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.4862669