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Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells

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Bibliographic Details
Title: Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells
Authors: Rudamas, C.1, carlos.rudamas@uv.es, Martínez-Pastor, J.1, González, L.2, Vinattieri, A.3, Colocci, M.3
Source: Physica E; Apr2003, Vol. 17, p206, 3p
Database: Applied Science & Technology Source
Description
ISSN:13869477
DOI:10.1016/S1386-9477(02)00774-9