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Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells

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Title: Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells
Authors: Rudamas, C.1, carlos.rudamas@uv.es, Martínez-Pastor, J.1, González, L.2, Vinattieri, A.3, Colocci, M.3
Source: Physica E; Apr2003, Vol. 17, p206, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 9571097
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells
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  Data: <searchLink fieldCode="JN" term="%22Physica+E%22">Physica E</searchLink>; Apr2003, Vol. 17, p206, 3p
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      – Type: doi
        Value: 10.1016/S1386-9477(02)00774-9
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 206
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      – TitleFull: Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells
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            NameFull: Rudamas, C.
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            NameFull: Martínez-Pastor, J.
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            NameFull: González, L.
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            NameFull: Vinattieri, A.
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              Text: Apr2003
              Type: published
              Y: 2003
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              Value: 17
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