Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeOx Interfacial Layer Formed by In Situ Desorption.
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| Title: | Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeOx Interfacial Layer Formed by In Situ Desorption. |
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| Authors: | Li, Chen-Chien1, Chang-Liao, Kuei-Shu1, Liu, Li-Jung1, Lee, Tzu-Min1, Fu, Chung-Hao1, Chen, Ting-Ching1, Cheng, Jen-Wei1, Lu, Chun-Chang1, Wang, Tien-Ko1 |
| Source: | IEEE Electron Device Letters; May2014, Vol. 35 Issue 5, p509-511, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 07413106 |
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| DOI: | 10.1109/LED.2014.2310636 |
