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Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeOx Interfacial Layer Formed by In Situ Desorption.

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Title: Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeOx Interfacial Layer Formed by In Situ Desorption.
Authors: Li, Chen-Chien1, Chang-Liao, Kuei-Shu1, Liu, Li-Jung1, Lee, Tzu-Min1, Fu, Chung-Hao1, Chen, Ting-Ching1, Cheng, Jen-Wei1, Lu, Chun-Chang1, Wang, Tien-Ko1
Source: IEEE Electron Device Letters; May2014, Vol. 35 Issue 5, p509-511, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 95720799
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeOx Interfacial Layer Formed by In Situ Desorption.
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; May2014, Vol. 35 Issue 5, p509-511, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=95720799
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      – Type: doi
        Value: 10.1109/LED.2014.2310636
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 509
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      – TitleFull: Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeOx Interfacial Layer Formed by In Situ Desorption.
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            NameFull: Fu, Chung-Hao
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              M: 05
              Text: May2014
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              Value: 5
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            – TitleFull: IEEE Electron Device Letters
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