An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer.
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| Title: | An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer. |
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| Authors: | Fu, Chung-Hao1, Chang-Liao, Kuei-Shu1, Liu, Li-Jung1, Li, Chen-Chien1, Chen, Ting-Ching1, Cheng, Jen-Wei1, Lu, Chun-Chang1 |
| Source: | IEEE Transactions on Electron Devices; Aug2014, Vol. 61 Issue 8, p2662-2667, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00189383 |
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| DOI: | 10.1109/TED.2014.2329839 |
