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An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer.

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Title: An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer.
Authors: Fu, Chung-Hao1, Chang-Liao, Kuei-Shu1, Liu, Li-Jung1, Li, Chen-Chien1, Chen, Ting-Ching1, Cheng, Jen-Wei1, Lu, Chun-Chang1
Source: IEEE Transactions on Electron Devices; Aug2014, Vol. 61 Issue 8, p2662-2667, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 97237465
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer.
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>; Aug2014, Vol. 61 Issue 8, p2662-2667, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=97237465
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1109/TED.2014.2329839
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 2662
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      – TitleFull: An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer.
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            NameFull: Fu, Chung-Hao
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            NameFull: Chang-Liao, Kuei-Shu
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            NameFull: Liu, Li-Jung
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            NameFull: Li, Chen-Chien
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            NameFull: Chen, Ting-Ching
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            NameFull: Cheng, Jen-Wei
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            NameFull: Lu, Chun-Chang
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          Dates:
            – D: 01
              M: 08
              Text: Aug2014
              Type: published
              Y: 2014
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            – TitleFull: IEEE Transactions on Electron Devices
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