In situ doping in silicon selective epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition.
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| Title: | In situ doping in silicon selective epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition. |
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| Authors: | Yew, Tri-Rung, Reif, Rafael |
| Source: | Applied Physics Letters; 11/5/1990, Vol. 57 Issue 19, p2010, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.103993 |
