APA (7th ed.) Citation

Yew, T., & Reif, R. (1990). In situ doping in silicon selective epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition. Applied Physics Letters, 57(19), 2010. https://doi.org/10.1063/1.103993

Chicago Style (17th ed.) Citation

Yew, Tri-Rung, and Rafael Reif. "In Situ Doping in Silicon Selective Epitaxial Growth at 800 °C by Ultralow-pressure Chemical Vapor Deposition." Applied Physics Letters 57, no. 19 (1990): 2010. https://doi.org/10.1063/1.103993.

MLA (9th ed.) Citation

Yew, Tri-Rung, and Rafael Reif. "In Situ Doping in Silicon Selective Epitaxial Growth at 800 °C by Ultralow-pressure Chemical Vapor Deposition." Applied Physics Letters, vol. 57, no. 19, 1990, p. 2010, https://doi.org/10.1063/1.103993.