APA (7th ed.) Citation

Yew, T., O, K., & Reif, R. (1988). Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition. Applied Physics Letters, 52(21), 1797. https://doi.org/10.1063/1.99629

Chicago Style (17th ed.) Citation

Yew, Tri-Rung, Kenneth O, and Rafael Reif. "Silicon Epitaxial Growth on (100) Patterned Oxide Wafers at 800 °C by Ultralow-pressure Chemical Vapor Deposition." Applied Physics Letters 52, no. 21 (1988): 1797. https://doi.org/10.1063/1.99629.

MLA (9th ed.) Citation

Yew, Tri-Rung, et al. "Silicon Epitaxial Growth on (100) Patterned Oxide Wafers at 800 °C by Ultralow-pressure Chemical Vapor Deposition." Applied Physics Letters, vol. 52, no. 21, 1988, p. 1797, https://doi.org/10.1063/1.99629.