Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1797 (1988)].
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| Title: | Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1797 (1988)]. |
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| Authors: | Yew, Tri-Rung, O, Kenneth, Reif, Rafael |
| Source: | Applied Physics Letters; 6/13/1988, Vol. 52 Issue 24, p2061, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.99663 |
