APA (7th ed.) Citation

Yew, T., O, K., & Reif, R. (1988). Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1797 (1988)]. Applied Physics Letters, 52(24), 2061. https://doi.org/10.1063/1.99663

Chicago Style (17th ed.) Citation

Yew, Tri-Rung, Kenneth O, and Rafael Reif. "Erratum: Silicon Epitaxial Growth on (100) Patterned Oxide Wafers at 800 °C by Ultralow-pressure Chemical Vapor Deposition [Appl. Phys. Lett. 52, 1797 (1988)]." Applied Physics Letters 52, no. 24 (1988): 2061. https://doi.org/10.1063/1.99663.

MLA (9th ed.) Citation

Yew, Tri-Rung, et al. "Erratum: Silicon Epitaxial Growth on (100) Patterned Oxide Wafers at 800 °C by Ultralow-pressure Chemical Vapor Deposition [Appl. Phys. Lett. 52, 1797 (1988)]." Applied Physics Letters, vol. 52, no. 24, 1988, p. 2061, https://doi.org/10.1063/1.99663.