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Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1797 (1988)].

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Title: Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1797 (1988)].
Authors: Yew, Tri-Rung, O, Kenneth, Reif, Rafael
Source: Applied Physics Letters; 6/13/1988, Vol. 52 Issue 24, p2061, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 9827096
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1797 (1988)].
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  Data: <searchLink fieldCode="AU" term="%22Yew%2C+Tri-Rung%22">Yew, Tri-Rung</searchLink><br /><searchLink fieldCode="AU" term="%22O%2C+Kenneth%22">O, Kenneth</searchLink><br /><searchLink fieldCode="AU" term="%22Reif%2C+Rafael%22">Reif, Rafael</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 6/13/1988, Vol. 52 Issue 24, p2061, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=9827096
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        Value: 10.1063/1.99663
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        Text: English
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      – TitleFull: Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1797 (1988)].
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            NameFull: Yew, Tri-Rung
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            NameFull: O, Kenneth
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            NameFull: Reif, Rafael
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              Text: 6/13/1988
              Type: published
              Y: 1988
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