Enhanced electrical quality of low-temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma-enhanced chemical vapor deposition.
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| Title: | Enhanced electrical quality of low-temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma-enhanced chemical vapor deposition. |
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| Authors: | Ohi, S., Burger, W. R., Reif, R. |
| Source: | Applied Physics Letters; 9/5/1988, Vol. 53 Issue 10, p891, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.100106 |
