APA (7th ed.) Citation

Ohi, S., Burger, W. R., & Reif, R. (1988). Enhanced electrical quality of low-temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma-enhanced chemical vapor deposition. Applied Physics Letters, 53(10), 891. https://doi.org/10.1063/1.100106

Chicago Style (17th ed.) Citation

Ohi, S., W. R. Burger, and R. Reif. "Enhanced Electrical Quality of Low-temperature (Tdep≤800 °C) Epitaxial Silicon Deposited by Plasma-enhanced Chemical Vapor Deposition." Applied Physics Letters 53, no. 10 (1988): 891. https://doi.org/10.1063/1.100106.

MLA (9th ed.) Citation

Ohi, S., et al. "Enhanced Electrical Quality of Low-temperature (Tdep≤800 °C) Epitaxial Silicon Deposited by Plasma-enhanced Chemical Vapor Deposition." Applied Physics Letters, vol. 53, no. 10, 1988, p. 891, https://doi.org/10.1063/1.100106.