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Enhanced electrical quality of low-temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma-enhanced chemical vapor deposition.

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Bibliographic Details
Title: Enhanced electrical quality of low-temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma-enhanced chemical vapor deposition.
Authors: Ohi, S., Burger, W. R., Reif, R.
Source: Applied Physics Letters; 9/5/1988, Vol. 53 Issue 10, p891, 3p
Database: Applied Science & Technology Source
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