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GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy.

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Title: GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy.
Authors: Tsang, W. T., Levi, A. F. J., Burkhardt, E. G.
Source: Applied Physics Letters; 9/12/1988, Vol. 53 Issue 11, p983, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 9828058
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Tsang%2C+W%2E+T%2E%22">Tsang, W. T.</searchLink><br /><searchLink fieldCode="AU" term="%22Levi%2C+A%2E+F%2E+J%2E%22">Levi, A. F. J.</searchLink><br /><searchLink fieldCode="AU" term="%22Burkhardt%2C+E%2E+G%2E%22">Burkhardt, E. G.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 9/12/1988, Vol. 53 Issue 11, p983, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=9828058
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.100048
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 3
        StartPage: 983
    Titles:
      – TitleFull: GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Tsang, W. T.
      – PersonEntity:
          Name:
            NameFull: Levi, A. F. J.
      – PersonEntity:
          Name:
            NameFull: Burkhardt, E. G.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 12
              M: 09
              Text: 9/12/1988
              Type: published
              Y: 1988
          Identifiers:
            – Type: issn-print
              Value: 00036951
          Numbering:
            – Type: volume
              Value: 53
            – Type: issue
              Value: 11
          Titles:
            – TitleFull: Applied Physics Letters
              Type: main
ResultId 1