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GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy.

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Bibliographic Details
Title: GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy.
Authors: Tsang, W. T., Levi, A. F. J., Burkhardt, E. G.
Source: Applied Physics Letters; 9/12/1988, Vol. 53 Issue 11, p983, 3p
Database: Applied Science & Technology Source
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