Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams.
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| Title: | Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams. |
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| Authors: | Haynes, T. E., Zuhr, R. A., Pennycook, S. J., Appleton, B. R. |
| Source: | Applied Physics Letters; 4/10/1989, Vol. 54 Issue 15, p1439, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.100690 |
