Silicon selective epitaxial growth at 800 °C using SiH4/H2 assisted by H2/Ar plasma sputter.
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| Title: | Silicon selective epitaxial growth at 800 °C using SiH4/H2 assisted by H2/Ar plasma sputter. |
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| Authors: | Yew, Tri-Rung, Reif, Rafael |
| Source: | Applied Physics Letters; 9/4/1989, Vol. 55 Issue 10, p1014, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.101720 |
