APA (7th ed.) Citation

Yew, T., & Reif, R. (1989). Silicon selective epitaxial growth at 800 °C using SiH4/H2 assisted by H2/Ar plasma sputter. Applied Physics Letters, 55(10), 1014. https://doi.org/10.1063/1.101720

Chicago Style (17th ed.) Citation

Yew, Tri-Rung, and Rafael Reif. "Silicon Selective Epitaxial Growth at 800 °C Using SiH4/H2 Assisted by H2/Ar Plasma Sputter." Applied Physics Letters 55, no. 10 (1989): 1014. https://doi.org/10.1063/1.101720.

MLA (9th ed.) Citation

Yew, Tri-Rung, and Rafael Reif. "Silicon Selective Epitaxial Growth at 800 °C Using SiH4/H2 Assisted by H2/Ar Plasma Sputter." Applied Physics Letters, vol. 55, no. 10, 1989, p. 1014, https://doi.org/10.1063/1.101720.