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Silicon selective epitaxial growth at 800 °C using SiH4/H2 assisted by H2/Ar plasma sputter.

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Bibliographic Details
Title: Silicon selective epitaxial growth at 800 °C using SiH4/H2 assisted by H2/Ar plasma sputter.
Authors: Yew, Tri-Rung, Reif, Rafael
Source: Applied Physics Letters; 9/4/1989, Vol. 55 Issue 10, p1014, 3p
Database: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Silicon selective epitaxial growth at 800 °C using SiH4/H2 assisted by H2/Ar plasma sputter.
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        Value: 10.1063/1.101720
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 1014
    Titles:
      – TitleFull: Silicon selective epitaxial growth at 800 °C using SiH4/H2 assisted by H2/Ar plasma sputter.
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            NameFull: Yew, Tri-Rung
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            NameFull: Reif, Rafael
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              Text: 9/4/1989
              Type: published
              Y: 1989
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              Value: 10
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