High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth-sputter cycles.

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Bibliographic Details
Title: High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth-sputter cycles.
Authors: Yew, Tri-Rung, Reif, Rafael
Source: Applied Physics Letters; 5/21/1990, Vol. 56 Issue 21, p2105, 3p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.103232