APA (7th ed.) Citation

Yew, T., & Reif, R. (1990). High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth-sputter cycles. Applied Physics Letters, 56(21), 2105. https://doi.org/10.1063/1.103232

Chicago Style (17th ed.) Citation

Yew, Tri-Rung, and Rafael Reif. "High Structural Quality Epi/oxide Boundaries of Selective Epitaxy Grown by SiH4/H2 Chemical Vapor Deposition Using Growth-sputter Cycles." Applied Physics Letters 56, no. 21 (1990): 2105. https://doi.org/10.1063/1.103232.

MLA (9th ed.) Citation

Yew, Tri-Rung, and Rafael Reif. "High Structural Quality Epi/oxide Boundaries of Selective Epitaxy Grown by SiH4/H2 Chemical Vapor Deposition Using Growth-sputter Cycles." Applied Physics Letters, vol. 56, no. 21, 1990, p. 2105, https://doi.org/10.1063/1.103232.