The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior.
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| Title: | The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior. |
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| Authors: | Tsung-Jui Yang1, Shivaraman, Ravi2, Speck, James S.2, Yuh-Renn Wu1, yrwu@ntu.edu.tw |
| Source: | Journal of Applied Physics; 2014, Vol. 116 Issue 11, p113104-1-113104-5, 5p, 4 Graphs |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.4896103 |
