APA (7th ed.) Citation

Yang, T., Shivaraman, R., Speck, J. S., & Wu, Y. (2014). The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior. Journal of Applied Physics, 116(11), 113104-1. https://doi.org/10.1063/1.4896103

Chicago Style (17th ed.) Citation

Yang, Tsung-Jui, Ravi Shivaraman, James S. Speck, and Yuh-Renn Wu. "The Influence of Random Indium Alloy Fluctuations in Indium Gallium Nitride Quantum Wells on the Device Behavior." Journal of Applied Physics 116, no. 11 (2014): 113104-1. https://doi.org/10.1063/1.4896103.

MLA (9th ed.) Citation

Yang, Tsung-Jui, et al. "The Influence of Random Indium Alloy Fluctuations in Indium Gallium Nitride Quantum Wells on the Device Behavior." Journal of Applied Physics, vol. 116, no. 11, 2014, pp. 113104-1, https://doi.org/10.1063/1.4896103.