The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior.
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| Title: | The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior. |
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| Authors: | Tsung-Jui Yang1, Shivaraman, Ravi2, Speck, James S.2, Yuh-Renn Wu1, yrwu@ntu.edu.tw |
| Source: | Journal of Applied Physics; 2014, Vol. 116 Issue 11, p113104-1-113104-5, 5p, 4 Graphs |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 98424954 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Tsung-Jui+Yang%22">Tsung-Jui Yang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Shivaraman%2C+Ravi%22">Shivaraman, Ravi</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Speck%2C+James+S%2E%22">Speck, James S.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Yuh-Renn+Wu%22">Yuh-Renn Wu</searchLink><relatesTo>1</relatesTo>, <i>yrwu@ntu.edu.tw</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 2014, Vol. 116 Issue 11, p113104-1-113104-5, 5p, 4 Graphs |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=98424954 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.4896103 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 113104-1 Titles: – TitleFull: The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Tsung-Jui Yang – PersonEntity: Name: NameFull: Shivaraman, Ravi – PersonEntity: Name: NameFull: Speck, James S. – PersonEntity: Name: NameFull: Yuh-Renn Wu IsPartOfRelationships: – BibEntity: Dates: – D: 21 M: 09 Text: 2014 Type: published Y: 2014 Identifiers: – Type: issn-print Value: 00218979 Numbering: – Type: volume Value: 116 – Type: issue Value: 11 Titles: – TitleFull: Journal of Applied Physics Type: main |
| ResultId | 1 |