The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior.

Saved in:
Bibliographic Details
Title: The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior.
Authors: Tsung-Jui Yang1, Shivaraman, Ravi2, Speck, James S.2, Yuh-Renn Wu1, yrwu@ntu.edu.tw
Source: Journal of Applied Physics; 2014, Vol. 116 Issue 11, p113104-1-113104-5, 5p, 4 Graphs
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 98424954
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Tsung-Jui+Yang%22">Tsung-Jui Yang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Shivaraman%2C+Ravi%22">Shivaraman, Ravi</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Speck%2C+James+S%2E%22">Speck, James S.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Yuh-Renn+Wu%22">Yuh-Renn Wu</searchLink><relatesTo>1</relatesTo>, <i>yrwu@ntu.edu.tw</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 2014, Vol. 116 Issue 11, p113104-1-113104-5, 5p, 4 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=98424954
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.4896103
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 113104-1
    Titles:
      – TitleFull: The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Tsung-Jui Yang
      – PersonEntity:
          Name:
            NameFull: Shivaraman, Ravi
      – PersonEntity:
          Name:
            NameFull: Speck, James S.
      – PersonEntity:
          Name:
            NameFull: Yuh-Renn Wu
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 21
              M: 09
              Text: 2014
              Type: published
              Y: 2014
          Identifiers:
            – Type: issn-print
              Value: 00218979
          Numbering:
            – Type: volume
              Value: 116
            – Type: issue
              Value: 11
          Titles:
            – TitleFull: Journal of Applied Physics
              Type: main
ResultId 1