Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel.
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| Title: | Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel. |
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| Authors: | Chen, Chun-Yuan1, Chang-Liao, Kuei-Shu1, Liu, Li-Jung1, Chen, Wei-Chieh1, Wang, Tien-Ko1 |
| Source: | IEEE Electron Device Letters; Oct2014, Vol. 35 Issue 10, p1025-1027, 3p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 98573076 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Chen%2C+Chun-Yuan%22">Chen, Chun-Yuan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chang-Liao%2C+Kuei-Shu%22">Chang-Liao, Kuei-Shu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Li-Jung%22">Liu, Li-Jung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chen%2C+Wei-Chieh%22">Chen, Wei-Chieh</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Tien-Ko%22">Wang, Tien-Ko</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; Oct2014, Vol. 35 Issue 10, p1025-1027, 3p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=98573076 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/LED.2014.2348714 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 3 StartPage: 1025 Titles: – TitleFull: Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chen, Chun-Yuan – PersonEntity: Name: NameFull: Chang-Liao, Kuei-Shu – PersonEntity: Name: NameFull: Liu, Li-Jung – PersonEntity: Name: NameFull: Chen, Wei-Chieh – PersonEntity: Name: NameFull: Wang, Tien-Ko IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 10 Text: Oct2014 Type: published Y: 2014 Identifiers: – Type: issn-print Value: 07413106 Numbering: – Type: volume Value: 35 – Type: issue Value: 10 Titles: – TitleFull: IEEE Electron Device Letters Type: main |
| ResultId | 1 |