Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel.

Saved in:
Bibliographic Details
Title: Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel.
Authors: Chen, Chun-Yuan1, Chang-Liao, Kuei-Shu1, Liu, Li-Jung1, Chen, Wei-Chieh1, Wang, Tien-Ko1
Source: IEEE Electron Device Letters; Oct2014, Vol. 35 Issue 10, p1025-1027, 3p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 98573076
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Chen%2C+Chun-Yuan%22">Chen, Chun-Yuan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chang-Liao%2C+Kuei-Shu%22">Chang-Liao, Kuei-Shu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Li-Jung%22">Liu, Li-Jung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chen%2C+Wei-Chieh%22">Chen, Wei-Chieh</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Tien-Ko%22">Wang, Tien-Ko</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; Oct2014, Vol. 35 Issue 10, p1025-1027, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=98573076
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/LED.2014.2348714
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 3
        StartPage: 1025
    Titles:
      – TitleFull: Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Chen, Chun-Yuan
      – PersonEntity:
          Name:
            NameFull: Chang-Liao, Kuei-Shu
      – PersonEntity:
          Name:
            NameFull: Liu, Li-Jung
      – PersonEntity:
          Name:
            NameFull: Chen, Wei-Chieh
      – PersonEntity:
          Name:
            NameFull: Wang, Tien-Ko
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 10
              Text: Oct2014
              Type: published
              Y: 2014
          Identifiers:
            – Type: issn-print
              Value: 07413106
          Numbering:
            – Type: volume
              Value: 35
            – Type: issue
              Value: 10
          Titles:
            – TitleFull: IEEE Electron Device Letters
              Type: main
ResultId 1