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Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel.

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Bibliographic Details
Title: Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel.
Authors: Chen, Chun-Yuan1, Chang-Liao, Kuei-Shu1, Liu, Li-Jung1, Chen, Wei-Chieh1, Wang, Tien-Ko1
Source: IEEE Electron Device Letters; Oct2014, Vol. 35 Issue 10, p1025-1027, 3p
Database: Applied Science & Technology Source
Description
ISSN:07413106
DOI:10.1109/LED.2014.2348714