Gas identification based on bias induced hysteresis of a gas-sensitive SiC field effect transistor.
Saved in:
| Title: | Gas identification based on bias induced hysteresis of a gas-sensitive SiC field effect transistor. |
|---|---|
| Authors: | Bastuck, M.1, m.bastuck@lmt.uni-saarland.de, Bur, C.1,2, Spetz, A. Lloyd2, Andersson, M.2, Schütze, A.1 |
| Source: | Journal of Sensors & Sensor Systems; 2014, Vol. 3 Issue 1, p9-19, 11p |
| Database: | Applied Science & Technology Source |
| ISSN: | 21948771 |
|---|---|
| DOI: | 10.5194/jsss-3-9-2014 |
