View in EDS

Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage.

Saved in:
Bibliographic Details
Title: Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage.
Authors: Doering, S.1,2, stefan.doering@infineon.com, Rudolf, R.1, Pinkert, M.1, Roetz, H.1, Wagner, C.1, Eckl, S.1, Strasser, M.3, Wachowiak, A.2, Mikolajick, T.2,4
Source: Microelectronics Reliability; Sep2014, Vol. 54 Issue 9/10, p2128-2132, 5p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 99232021
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Doering%2C+S%2E%22">Doering, S.</searchLink><relatesTo>1,2</relatesTo>, <i>stefan.doering@infineon.com</i><br /><searchLink fieldCode="AU" term="%22Rudolf%2C+R%2E%22">Rudolf, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Pinkert%2C+M%2E%22">Pinkert, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Roetz%2C+H%2E%22">Roetz, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wagner%2C+C%2E%22">Wagner, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Eckl%2C+S%2E%22">Eckl, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Strasser%2C+M%2E%22">Strasser, M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Wachowiak%2C+A%2E%22">Wachowiak, A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Mikolajick%2C+T%2E%22">Mikolajick, T.</searchLink><relatesTo>2,4</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Microelectronics+Reliability%22">Microelectronics Reliability</searchLink>; Sep2014, Vol. 54 Issue 9/10, p2128-2132, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=99232021
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.microrel.2014.07.021
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 2128
    Titles:
      – TitleFull: Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Doering, S.
      – PersonEntity:
          Name:
            NameFull: Rudolf, R.
      – PersonEntity:
          Name:
            NameFull: Pinkert, M.
      – PersonEntity:
          Name:
            NameFull: Roetz, H.
      – PersonEntity:
          Name:
            NameFull: Wagner, C.
      – PersonEntity:
          Name:
            NameFull: Eckl, S.
      – PersonEntity:
          Name:
            NameFull: Strasser, M.
      – PersonEntity:
          Name:
            NameFull: Wachowiak, A.
      – PersonEntity:
          Name:
            NameFull: Mikolajick, T.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 09
              Text: Sep2014
              Type: published
              Y: 2014
          Identifiers:
            – Type: issn-print
              Value: 00262714
          Numbering:
            – Type: volume
              Value: 54
            – Type: issue
              Value: 9/10
          Titles:
            – TitleFull: Microelectronics Reliability
              Type: main
ResultId 1