Ion implantation effects in silicon with high carbon content characterised by photoluminescence

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Bibliographic Details
Title: Ion implantation effects in silicon with high carbon content characterised by photoluminescence
Authors: Tan, Jin1,2, Davies, Gordon1 gordon.davies@kcl.ac.uk, Hayama, Shusaku1, Harding, Ruth1, Wong-Leung, Jennifer3
Source: Physica B. 12/31/2003, Vol. 340-342, p714. 5p.
Database: Academic Search Ultimate
Description
ISSN:09214526
DOI:10.1016/j.physb.2003.09.154