A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique.
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| Title: | A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique. |
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| Authors: | Lin, Li‐Min1, Yang, Wen‐Luh2 wlyang@fcu.edu.tw, Lin, Yu‐Hsien3, Hsiao, Yu‐Ping1, Chin, Fun‐Tat1, Kao, Ming‐Fang2 |
| Source: | Physica Status Solidi. A: Applications & Materials Science. Mar2017, Vol. 214 Issue 3, pn/a-N.PAG. 5p. |
| Database: | Academic Search Ultimate |
| ISSN: | 18626300 |
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| DOI: | 10.1002/pssa.201600595 |
