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A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique.

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Title: A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique.
Authors: Lin, Li‐Min1, Yang, Wen‐Luh2 wlyang@fcu.edu.tw, Lin, Yu‐Hsien3, Hsiao, Yu‐Ping1, Chin, Fun‐Tat1, Kao, Ming‐Fang2
Source: Physica Status Solidi. A: Applications & Materials Science. Mar2017, Vol. 214 Issue 3, pn/a-N.PAG. 5p.
Database: Academic Search Ultimate
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DbLabel: Academic Search Ultimate
An: 121775913
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique.
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  Data: <searchLink fieldCode="JN" term="%22Physica+Status+Solidi%2E+A%3A+Applications+%26+Materials+Science%22">Physica Status Solidi. A: Applications & Materials Science</searchLink>. Mar2017, Vol. 214 Issue 3, pn/a-N.PAG. 5p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=121775913
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      – Type: doi
        Value: 10.1002/pssa.201600595
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      – Code: eng
        Text: English
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        PageCount: 5
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      – TitleFull: A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique.
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            NameFull: Lin, Li‐Min
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            NameFull: Yang, Wen‐Luh
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            NameFull: Lin, Yu‐Hsien
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            NameFull: Hsiao, Yu‐Ping
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            NameFull: Chin, Fun‐Tat
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            NameFull: Kao, Ming‐Fang
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            – D: 01
              M: 03
              Text: Mar2017
              Type: published
              Y: 2017
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              Value: 214
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