The method for calculation of carrier concentration in narrow-gap n-type doped HgCdTe structures.

Saved in:

Bibliographic Details
Title:	The method for calculation of carrier concentration in narrow-gap n-type doped HgCdTe structures.
Authors:	Jóźwikowska, Alina¹, Jóźwikowski, Krzysztof² krzysztof.jozwikowski@wat.edu.pl, Suligowski, Mariusz², Moszczyński, Paweł³, Nietopiel, Michał²
Source:	Optical & Quantum Electronics. Mar2017, Vol. 49 Issue 3, p1-8. 8p.
Database:	Academic Search Ultimate

Description
ISSN:	03068919
DOI:	10.1007/s11082-017-0941-7