APA (7th ed.) Citation

Jóźwikowska, A., Jóźwikowski, K., Suligowski, M., Moszczyński, P., & Nietopiel, M. (2017). The method for calculation of carrier concentration in narrow-gap n-type doped HgCdTe structures. Optical & Quantum Electronics, 49(3), 1. https://doi.org/10.1007/s11082-017-0941-7

Chicago Style (17th ed.) Citation

Jóźwikowska, Alina, Krzysztof Jóźwikowski, Mariusz Suligowski, Paweł Moszczyński, and Michał Nietopiel. "The Method for Calculation of Carrier Concentration in Narrow-gap N-type Doped HgCdTe Structures." Optical & Quantum Electronics 49, no. 3 (2017): 1. https://doi.org/10.1007/s11082-017-0941-7.

MLA (9th ed.) Citation

Jóźwikowska, Alina, et al. "The Method for Calculation of Carrier Concentration in Narrow-gap N-type Doped HgCdTe Structures." Optical & Quantum Electronics, vol. 49, no. 3, 2017, p. 1, https://doi.org/10.1007/s11082-017-0941-7.