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The method for calculation of carrier concentration in narrow-gap n-type doped HgCdTe structures.

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Title: The method for calculation of carrier concentration in narrow-gap n-type doped HgCdTe structures.
Authors: Jóźwikowska, Alina1, Jóźwikowski, Krzysztof2 krzysztof.jozwikowski@wat.edu.pl, Suligowski, Mariusz2, Moszczyński, Paweł3, Nietopiel, Michał2
Source: Optical & Quantum Electronics. Mar2017, Vol. 49 Issue 3, p1-8. 8p.
Database: Academic Search Ultimate
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  Data: The method for calculation of carrier concentration in narrow-gap n-type doped HgCdTe structures.
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  Data: <searchLink fieldCode="AR" term="%22Jóźwikowska%2C+Alina%22">Jóźwikowska, Alina</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jóźwikowski%2C+Krzysztof%22">Jóźwikowski, Krzysztof</searchLink><relatesTo>2</relatesTo><i> krzysztof.jozwikowski@wat.edu.pl</i><br /><searchLink fieldCode="AR" term="%22Suligowski%2C+Mariusz%22">Suligowski, Mariusz</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Moszczyński%2C+Paweł%22">Moszczyński, Paweł</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Nietopiel%2C+Michał%22">Nietopiel, Michał</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Optical+%26+Quantum+Electronics%22">Optical & Quantum Electronics</searchLink>. Mar2017, Vol. 49 Issue 3, p1-8. 8p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=121976801
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      – Type: doi
        Value: 10.1007/s11082-017-0941-7
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        Text: English
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      – TitleFull: The method for calculation of carrier concentration in narrow-gap n-type doped HgCdTe structures.
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              Text: Mar2017
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              Y: 2017
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