Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment.
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| Title: | Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment. |
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| Authors: | Fan, Ching-Lin1,2 clfan@mail.ntust.edu.tw, Tseng, Fan-Ping2, Tseng, Chiao-Yuan1 |
| Source: | Materials (1996-1944). May2018, Vol. 11 Issue 5, p824. 1p. 1 Diagram, 1 Chart, 5 Graphs. |
| Database: | Academic Search Ultimate |
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| ISSN: | 19961944 |
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| DOI: | 10.3390/ma11050824 |
