APA (7th ed.) Citation

Fan, C., Tseng, F., & Tseng, C. (2018). Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment. Materials (1996-1944), 11(5), 824. https://doi.org/10.3390/ma11050824

Chicago Style (17th ed.) Citation

Fan, Ching-Lin, Fan-Ping Tseng, and Chiao-Yuan Tseng. "Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment." Materials (1996-1944) 11, no. 5 (2018): 824. https://doi.org/10.3390/ma11050824.

MLA (9th ed.) Citation

Fan, Ching-Lin, et al. "Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment." Materials (1996-1944), vol. 11, no. 5, 2018, p. 824, https://doi.org/10.3390/ma11050824.