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Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment.

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Title: Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment.
Authors: Fan, Ching-Lin1,2 clfan@mail.ntust.edu.tw, Tseng, Fan-Ping2, Tseng, Chiao-Yuan1
Source: Materials (1996-1944). May2018, Vol. 11 Issue 5, p824. 1p. 1 Diagram, 1 Chart, 5 Graphs.
Database: Academic Search Ultimate
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  Data: Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment.
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  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. May2018, Vol. 11 Issue 5, p824. 1p. 1 Diagram, 1 Chart, 5 Graphs.
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        Value: 10.3390/ma11050824
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      – Code: eng
        Text: English
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      – TitleFull: Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment.
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            NameFull: Fan, Ching-Lin
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            NameFull: Tseng, Fan-Ping
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              Value: 11
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