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Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices.

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Bibliographic Details
Title: Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices.
Authors: Guo, Pengfei1 guop01@udayton.edu, Burrow, Joshua A.1, Sevison, Gary A.1,2, Sood, Aditya3,4, Asheghi, Mehdi4, Hendrickson, Joshua R.2, Goodson, Kenneth E.4, Agha, Imad1,5, Sarangan, Andrew1 asaragan1@udayton.edu
Source: Applied Physics Letters. 10/22/2018, Vol. 113 Issue 17, pN.PAG-N.PAG. 5p. 1 Chart, 5 Graphs.
Database: Academic Search Ultimate
Description
ISSN:00036951
DOI:10.1063/1.5053713