APA (7th ed.) Citation

Guo, P., Burrow, J. A., Sevison, G. A., Sood, A., Asheghi, M., Hendrickson, J. R., . . . Sarangan, A. (2018). Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices. Applied Physics Letters, 113(17), N.PAG. https://doi.org/10.1063/1.5053713

Chicago Style (17th ed.) Citation

Guo, Pengfei, Joshua A. Burrow, Gary A. Sevison, Aditya Sood, Mehdi Asheghi, Joshua R. Hendrickson, Kenneth E. Goodson, Imad Agha, and Andrew Sarangan. "Improving the Performance of Ge2Sb2Te5 Materials via Nickel Doping: Towards RF-compatible Phase-change Devices." Applied Physics Letters 113, no. 17 (2018): N.PAG. https://doi.org/10.1063/1.5053713.

MLA (9th ed.) Citation

Guo, Pengfei, et al. "Improving the Performance of Ge2Sb2Te5 Materials via Nickel Doping: Towards RF-compatible Phase-change Devices." Applied Physics Letters, vol. 113, no. 17, 2018, p. N.PAG, https://doi.org/10.1063/1.5053713.