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Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.

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Title: Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.
Authors: Seredin, P. V.1,2 (AUTHOR) paul@phys.vsu.ru, Goloshchapov, D. L.1 (AUTHOR), Zolotukhin, D. S.1 (AUTHOR), Lenshin, A. S.1 (AUTHOR), Mizerov, A. M.3 (AUTHOR) andreymizerov@rambler.ru, Arsentyev, I. N.4 (AUTHOR) arsentyev@mail.ioffe.ru, Leiste, Harald5 (AUTHOR), Rinke, Monika5 (AUTHOR)
Source: Semiconductors. Aug2019, Vol. 53 Issue 8, p1120-1130. 11p.
Database: Academic Search Ultimate
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ISSN:10637826
DOI:10.1134/S1063782619080165