APA (7th ed.) Citation

Seredin, P. V., Goloshchapov, D. L., Zolotukhin, D. S., Lenshin, A. S., Mizerov, A. M., Arsentyev, I. N., . . . Rinke, M. (2019). Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate. Semiconductors, 53(8), 1120. https://doi.org/10.1134/S1063782619080165

Chicago Style (17th ed.) Citation

Seredin, P. V., D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin, A. M. Mizerov, I. N. Arsentyev, Harald Leiste, and Monika Rinke. "Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant Por-Si(111) Substrate." Semiconductors 53, no. 8 (2019): 1120. https://doi.org/10.1134/S1063782619080165.

MLA (9th ed.) Citation

Seredin, P. V., et al. "Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant Por-Si(111) Substrate." Semiconductors, vol. 53, no. 8, 2019, p. 1120, https://doi.org/10.1134/S1063782619080165.