Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.
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| Title: | Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate. |
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| Authors: | Seredin, P. V.1,2 (AUTHOR) paul@phys.vsu.ru, Goloshchapov, D. L.1 (AUTHOR), Zolotukhin, D. S.1 (AUTHOR), Lenshin, A. S.1 (AUTHOR), Mizerov, A. M.3 (AUTHOR) andreymizerov@rambler.ru, Arsentyev, I. N.4 (AUTHOR) arsentyev@mail.ioffe.ru, Leiste, Harald5 (AUTHOR), Rinke, Monika5 (AUTHOR) |
| Source: | Semiconductors. Aug2019, Vol. 53 Issue 8, p1120-1130. 11p. |
| Database: | Academic Search Ultimate |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: asn DbLabel: Academic Search Ultimate An: 137945633 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Seredin%2C+P%2E+V%2E%22">Seredin, P. V.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> paul@phys.vsu.ru</i><br /><searchLink fieldCode="AR" term="%22Goloshchapov%2C+D%2E+L%2E%22">Goloshchapov, D. L.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zolotukhin%2C+D%2E+S%2E%22">Zolotukhin, D. S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lenshin%2C+A%2E+S%2E%22">Lenshin, A. S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mizerov%2C+A%2E+M%2E%22">Mizerov, A. M.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> andreymizerov@rambler.ru</i><br /><searchLink fieldCode="AR" term="%22Arsentyev%2C+I%2E+N%2E%22">Arsentyev, I. N.</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> arsentyev@mail.ioffe.ru</i><br /><searchLink fieldCode="AR" term="%22Leiste%2C+Harald%22">Leiste, Harald</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Rinke%2C+Monika%22">Rinke, Monika</searchLink><relatesTo>5</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Aug2019, Vol. 53 Issue 8, p1120-1130. 11p. |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=137945633 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/S1063782619080165 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 1120 Titles: – TitleFull: Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Seredin, P. V. – PersonEntity: Name: NameFull: Goloshchapov, D. L. – PersonEntity: Name: NameFull: Zolotukhin, D. S. – PersonEntity: Name: NameFull: Lenshin, A. S. – PersonEntity: Name: NameFull: Mizerov, A. M. – PersonEntity: Name: NameFull: Arsentyev, I. N. – PersonEntity: Name: NameFull: Leiste, Harald – PersonEntity: Name: NameFull: Rinke, Monika IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2019 Type: published Y: 2019 Identifiers: – Type: issn-print Value: 10637826 Numbering: – Type: volume Value: 53 – Type: issue Value: 8 Titles: – TitleFull: Semiconductors Type: main |
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