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Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure.

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Title: Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure.
Authors: Li, Tingting1,2 (AUTHOR), Wang, Xiaolei2 (AUTHOR), He, Xiaobin2 (AUTHOR), Tang, Bo2 (AUTHOR), Han, Kai3 (AUTHOR) hankai@wfu.edu.cn, Qi, Zeming4 (AUTHOR), Jiang, Haojie2 (AUTHOR), Xiong, Wenjuan2 (AUTHOR), Zhang, Peng2 (AUTHOR), Li, Junfeng2 (AUTHOR), Yan, Jiang5 (AUTHOR), Xiang, Jinjuan2 (AUTHOR) xiangjinjuan@ime.ac.cn, Lin, Fujiang1 (AUTHOR) linfj@ustc.edu.cn
Source: Applied Physics A: Materials Science & Processing. May2020, Vol. 126 Issue 5, p1-6. 6p. 7 Graphs.
Database: Academic Search Ultimate
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Description
ISSN:09478396
DOI:10.1007/s00339-020-03565-8