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Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure.

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Title: Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure.
Authors: Li, Tingting1,2 (AUTHOR), Wang, Xiaolei2 (AUTHOR), He, Xiaobin2 (AUTHOR), Tang, Bo2 (AUTHOR), Han, Kai3 (AUTHOR) hankai@wfu.edu.cn, Qi, Zeming4 (AUTHOR), Jiang, Haojie2 (AUTHOR), Xiong, Wenjuan2 (AUTHOR), Zhang, Peng2 (AUTHOR), Li, Junfeng2 (AUTHOR), Yan, Jiang5 (AUTHOR), Xiang, Jinjuan2 (AUTHOR) xiangjinjuan@ime.ac.cn, Lin, Fujiang1 (AUTHOR) linfj@ustc.edu.cn
Source: Applied Physics A: Materials Science & Processing. May2020, Vol. 126 Issue 5, p1-6. 6p. 7 Graphs.
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DbLabel: Academic Search Ultimate
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Li%2C+Tingting%22">Li, Tingting</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Xiaolei%22">Wang, Xiaolei</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22He%2C+Xiaobin%22">He, Xiaobin</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tang%2C+Bo%22">Tang, Bo</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Han%2C+Kai%22">Han, Kai</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> hankai@wfu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Qi%2C+Zeming%22">Qi, Zeming</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jiang%2C+Haojie%22">Jiang, Haojie</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xiong%2C+Wenjuan%22">Xiong, Wenjuan</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Peng%22">Zhang, Peng</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Junfeng%22">Li, Junfeng</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yan%2C+Jiang%22">Yan, Jiang</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xiang%2C+Jinjuan%22">Xiang, Jinjuan</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> xiangjinjuan@ime.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Lin%2C+Fujiang%22">Lin, Fujiang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> linfj@ustc.edu.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. May2020, Vol. 126 Issue 5, p1-6. 6p. 7 Graphs.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=143299693
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s00339-020-03565-8
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 1
    Titles:
      – TitleFull: Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Li, Tingting
      – PersonEntity:
          Name:
            NameFull: Wang, Xiaolei
      – PersonEntity:
          Name:
            NameFull: He, Xiaobin
      – PersonEntity:
          Name:
            NameFull: Tang, Bo
      – PersonEntity:
          Name:
            NameFull: Han, Kai
      – PersonEntity:
          Name:
            NameFull: Qi, Zeming
      – PersonEntity:
          Name:
            NameFull: Jiang, Haojie
      – PersonEntity:
          Name:
            NameFull: Xiong, Wenjuan
      – PersonEntity:
          Name:
            NameFull: Zhang, Peng
      – PersonEntity:
          Name:
            NameFull: Li, Junfeng
      – PersonEntity:
          Name:
            NameFull: Yan, Jiang
      – PersonEntity:
          Name:
            NameFull: Xiang, Jinjuan
      – PersonEntity:
          Name:
            NameFull: Lin, Fujiang
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 05
              Text: May2020
              Type: published
              Y: 2020
          Identifiers:
            – Type: issn-print
              Value: 09478396
          Numbering:
            – Type: volume
              Value: 126
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Applied Physics A: Materials Science & Processing
              Type: main
ResultId 1